It is a national high-tech enterprise, a national top 500 chemical enterprise, and the largest titanium dioxide exporter in China. The main products are TiO2, zirconium products, sulfuric acid and sulfate. Among them, titanium dioxide has reached 120,000 tons, and its export volume has ranked first in the country for three consecutive years. The annual production capacity of the main titanium dioxide is 600,000 tons, ranking first in Asia and fourth in the world.
Of the products that include the additive in their labels, Thea Bourianne, senior manager at data consultant Label Insights, told Food Navigator USA in May 2021 that more than 11,000 products in the company's database of U.S. food and beverage products listed titanium dioxide as an ingredient. Non-chocolate candy led those numbers at 32%. Cupcakes and snack cakes made up 14%, followed by cookies at 8%, coated pretzels and trail mix at 7%, baking decorations at 6%, gum and mints at 4% and ice cream at 2%.
The vitaminB2@TiO2NPs were obtained at room temperature, by a method developed after trying several ratios of reactants. Briefly, 0.02 g of P25TiO2NPs were dispersed in 1 mL of ultra-pure water and stirred in a Vortex. Next, 200 μl of vitamin B2 dissolved in ultra-pure water (5.3 × 10−3 M) were added to 200 μL of P25TiO2NPs and the mixture was ultrasonicated for 1 hour to achieve a deep-yellow homogeneous suspension. The pellet obtained after centrifuging the suspension for 10 min at 4500 rpm was resuspended in ultrapure water, centrifuged again, and then lyophilized.
As they mimic the synapses in biological neurons, memristors became the key component for designing novel types of computing and information systems based on artificial neural networks, the so-called neuromorphic electronics (Zidan, 2018; Wang and Zhuge, 2019; Zhang et al., 2019b). Electronic artificial neurons with synaptic memristors are capable of emulating the associative memory, an important function of the brain (Pershin and Di Ventra, 2010). In addition, the technological simplicity of thin-film memristors based on transition metal oxides such as TiO2 allows their integration into electronic circuits with extremely high packing density. Memristor crossbars are technologically compatible with traditional integrated circuits, whose integration can be implemented within the complementary metal–oxide–semiconductor platform using nanoimprint lithography (Xia et al., 2009). Nowadays, the size of a Pt-TiOx-HfO2-Pt memristor crossbar can be as small as 2 nm (Pi et al., 2019). Thus, the inherent properties of memristors such as non-volatile resistive memory and synaptic plasticity, along with feasibly high integration density, are at the forefront of the new-type hardware performance of cognitive tasks, such as image recognition (Yao et al., 2017). The current state of the art, prospects, and challenges in the new brain-inspired computing concepts with memristive implementation have been comprehensively reviewed in topical papers (Jeong et al., 2016; Xia and Yang, 2019; Zhang et al., 2020). These reviews postulate that the newly emerging computing paradigm is still in its infancy, while the rapid development and current challenges in this field are related to the technological and materials aspects. The major concerns are the lack of understanding of the microscopic picture and the mechanisms of switching, as well as the unproven reliability of memristor materials. The choice of memristive materials as well as the methods of synthesis and fabrication affect the properties of memristive devices, including the amplitude of resistive switching, endurance, stochasticity, and data retention time.